MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(TC
= 155
°C) Per Diode
Per Device
IF(AV)
30
60
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC
= 151
°C)
IFRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
350
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
WAVAL
400
mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
?
Junction
?to?Case (Min. Pad)
?
Junction
?to?Ambient (Min. Pad)
RJC
RJA
1.0
70
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF
= 30 A, T
J
= 25
°C)
(iF
= 30 A, T
J
= 125
°C)
(iF
= 60 A, T
J
= 25
°C)
(iF
= 60 A, T
J
= 125
°C)
vF
?
?
?
?
0.80
0.68
0.93
0.81
0.84
0.72
0.98
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ
= 125
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
?
?
2.0
0.0013
10
0.01
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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